[J-1-3] AlGaN/GaN HFET using AlN/GaN Superlattice Barrier Layer

S. Yagi¹、Y. Kawakami¹、X. Q. Shen¹、A. Nakajima¹、T. Ide¹、M. Shimizu¹ (1.AIST)

https://doi.org/10.7567/SSDM.2009.J-1-3