[J-2-7L] High-electron-mobility InAs thin layers down to ~ 100 nm obtained by epitaxial lift-off and normal/inverted van der Waals bonding on flexible substrates

H. Takita¹、M. Akabori¹、T. Suzuki¹ (1.JAIST)

https://doi.org/10.7567/SSDM.2009.J-2-7L