[J-3-2] Improvement of Interface Properties by NH₃ Pretreatment for 4H-SiC(000-1) MOS Structure

Y. Iwasaki¹、H. Yano¹、T. Hatayama¹、Y. Uraoka¹、T. Fuyuki¹ (1.NAIST)

https://doi.org/10.7567/SSDM.2009.J-3-2