[J-3-2] Improvement of Interface Properties by NH₃ Pretreatment for 4H-SiC(000-1) MOS Structure

Y. Iwasaki¹, H. Yano¹, T. Hatayama¹, Y. Uraoka¹, T. Fuyuki¹ (1.NAIST)

https://doi.org/10.7567/SSDM.2009.J-3-2