[J-3-3] Very Smooth SiO₂/SiC Interface Formed by Supercritical Water Oxidation of Low Temperature

T. Futatsuki^1,2、T. Oe²、H. Aoki¹、N. Komatsu¹、C. Kimura¹、T. Sugino¹ (1.Osaka Univ.(Japan)、2.Organo Corp.(Japan))

https://doi.org/10.7567/SSDM.2009.J-3-3