The Japan Society of Applied Physics

2009 International Conference on Solid State Devices and Materials

2009 International Conference on Solid State Devices and Materials

Oct 6, 2009 - Oct 9, 2009
Sendai Kokusai Hotel, Miyagi, Japan

[J-3-3] Very Smooth SiO2/SiC Interface Formed by Supercritical Water Oxidation of Low Temperature

T. Futatsuki1,2, T. Oe2, H. Aoki1, N. Komatsu1, C. Kimura1, T. Sugino1 (1.Osaka Univ.(Japan), 2.Organo Corp.(Japan))

https://doi.org/10.7567/SSDM.2009.J-3-3