[J-3-4] Interface Properties of C-face 4H-SiC Metal-Oxide-Semiconductor Structures Prepared by Direct Oxidation in Nitric Oxide

D. Okamoto¹, H. Yano¹, Y. Oshiro¹, T. Hatayama¹, Y. Uraoka¹, T. Fuyuki¹ (1.NAIST)

https://doi.org/10.7567/SSDM.2009.J-3-4