[J-3-4] Interface Properties of C-face 4H-SiC Metal-Oxide-Semiconductor Structures Prepared by Direct Oxidation in Nitric Oxide

D. Okamoto¹、H. Yano¹、Y. Oshiro¹、T. Hatayama¹、Y. Uraoka¹、T. Fuyuki¹ (1.NAIST)

https://doi.org/10.7567/SSDM.2009.J-3-4