The Japan Society of Applied Physics

[J-4-2] Ultra-Fast Optical Response by InAlAs/InAs/InGaAs Pseudomorphic High Electron Mobility Transistors

H. Taguchi1, Y. Oishi1, T. Ando1, K. Uchimura1, M. Mochiduki1, M. Enomoto1, T. Iida1, Y. Takanashi1 (1.Tokyo Univ. of Sci.)

https://doi.org/10.7567/SSDM.2009.J-4-2