[J-4-3] 0.25-µm-Emitter InP HBTs with a Passivation Ledge Structure

N. Kashio¹、K. Kurishima¹、Y. K. Fukai¹、M. Ida¹、S. Yamahata¹ (1.NTT Corp.)

https://doi.org/10.7567/SSDM.2009.J-4-3