[J-5-5] Characteristics of Transparent ZnO Based Thin Film Transistors with High-k Dielectric Gd₂O₃ Gate Insulators Fabricated at Room Temperature

J. R. Tsai¹, C. S. Li¹, J. N. Chen¹, C. J. Tseng¹, P. H. Chien¹, W. S. Feng¹, K. C. Liu¹ (1.Chang Gung Univ.)

https://doi.org/10.7567/SSDM.2009.J-5-5