New Tunneling Model with Dependency of Temperature Measured in Si Nano-Dot Floating Gate MOS Capacitor

M. Muraguchi; Y. Sakurai; Y. Takada; Y. Shigeta; M. Ikeda; K. Makihara; S. Miyazaki; S. Nomura; K. Shiraishi; T. Endoh

doi:https://doi.org/10.7567/SSDM.2009.K-2-1

[K-2-1] New Tunneling Model with Dependency of Temperature Measured in Si Nano-Dot Floating Gate MOS Capacitor

M. Muraguchi¹、Y. Sakurai²、Y. Takada²、Y. Shigeta⁴、M. Ikeda³、K. Makihara³、S. Miyazaki³、S. Nomura²、K. Shiraishi²、T. Endoh¹ (1.Tohoku Univ.(Japan)、2.Univ. of Tsukuba(Japan)、3.Hiroshima Univ.(Japan)、4.Univ. of Hyogo(Japan))

https://doi.org/10.7567/SSDM.2009.K-2-1

2009 International Conference on Solid State Devices and Materials

[K-2-1] New Tunneling Model with Dependency of Temperature Measured in Si Nano-Dot Floating Gate MOS Capacitor