New Tunneling Model with Dependency of Temperature Measured in Si Nano-Dot Floating Gate MOS Capacitor

M. Muraguchi; Y. Sakurai; Y. Takada; Y. Shigeta; M. Ikeda; K. Makihara; S. Miyazaki; S. Nomura; K. Shiraishi; T. Endoh

doi:https://doi.org/10.7567/SSDM.2009.K-2-1

[K-2-1] New Tunneling Model with Dependency of Temperature Measured in Si Nano-Dot Floating Gate MOS Capacitor

M. Muraguchi¹, Y. Sakurai², Y. Takada², Y. Shigeta⁴, M. Ikeda³, K. Makihara³, S. Miyazaki³, S. Nomura², K. Shiraishi², T. Endoh¹ (1.Tohoku Univ.(Japan), 2.Univ. of Tsukuba(Japan), 3.Hiroshima Univ.(Japan), 4.Univ. of Hyogo(Japan))

https://doi.org/10.7567/SSDM.2009.K-2-1

2009 International Conference on Solid State Devices and Materials

[K-2-1] New Tunneling Model with Dependency of Temperature Measured in Si Nano-Dot Floating Gate MOS Capacitor