[K-5-1] High hole current density in diamond MOSFETs fabricated on H-terminated Iia-type (111) diamond substrate

K. Tsuge¹, Y. Jingu¹, H. Umezawa², H. Kawarada¹ (1.Waseda Univ.(Japan), 2.AIST(Japan))

https://doi.org/10.7567/SSDM.2009.K-5-1