[K-5-1] High hole current density in diamond MOSFETs fabricated on H-terminated Iia-type (111) diamond substrate K. Tsuge1、Y. Jingu1、H. Umezawa2、H. Kawarada1 (1.Waseda Univ.(Japan)、2.AIST(Japan)) https://doi.org/10.7567/SSDM.2009.K-5-1