[K-5-3] Formation of Highly B-doped Source & Drain Layers with TiC Ohmic Contacts for H-terminated Diamond MOSFETs

T. Tsuno¹、Y. Jingu¹、H. Umezawa²、H. Kawarada¹ (1.Waseda Univ.(Japan)、2.AIST(Japan))

https://doi.org/10.7567/SSDM.2009.K-5-3