CoFeB/MgO/CoFeB Magnetic Tunnel Junctions with Low Resistance-Area Product and High Magnetoresistance

H. D. Gan; K. Mizunuma; S. Ikeda; H. Yamamoto; K. Miura; H. Hasegawa; J. Hayakawa; F. Matsukura; H. Ohno

doi:https://doi.org/10.7567/SSDM.2009.K-7-1

[K-7-1] CoFeB/MgO/CoFeB Magnetic Tunnel Junctions with Low Resistance-Area Product and High Magnetoresistance

H. D. Gan¹、K. Mizunuma¹、S. Ikeda¹、H. Yamamoto¹、K. Miura^1,2、H. Hasegawa¹、J. Hayakawa²、F. Matsukura¹、H. Ohno¹ (1.Tohoku Univ.(Japan)、2.Hitachi, Ltd.(Japan))

https://doi.org/10.7567/SSDM.2009.K-7-1

2009 International Conference on Solid State Devices and Materials

[K-7-1] CoFeB/MgO/CoFeB Magnetic Tunnel Junctions with Low Resistance-Area Product and High Magnetoresistance