Annealing Temperature Dependence of Critical Current and Thermal Stability Factor in MgO-Barrier Magnetic Tunnel Junctions with CoFeB based Synthetic Ferrimagnetic Recording Layer

J. Hayakawa; H. Yamamoto; S. Ikeda; H. Hasegawa; M. Yamanouchi; K. Ito; H. Takahashi; H. Ohno

doi:https://doi.org/10.7567/SSDM.2009.K-7-4

[K-7-4] Annealing Temperature Dependence of Critical Current and Thermal Stability Factor in MgO-Barrier Magnetic Tunnel Junctions with CoFeB based Synthetic Ferrimagnetic Recording Layer

J. Hayakawa¹, H. Yamamoto^1,2, S. Ikeda², H. Hasegawa², M. Yamanouchi¹, K. Ito¹, H. Takahashi¹, H. Ohno² (1.Hitachi, Ltd.(Japan), 2.Tohoku Univ.(Japan))

https://doi.org/10.7567/SSDM.2009.K-7-4

2009 International Conference on Solid State Devices and Materials

[K-7-4] Annealing Temperature Dependence of Critical Current and Thermal Stability Factor in MgO-Barrier Magnetic Tunnel Junctions with CoFeB based Synthetic Ferrimagnetic Recording Layer