The Japan Society of Applied Physics

[P-1-11] Hole Tunnel Currents in TiN/HfSiOxN/SiO2/p-Si(100) MOS Capacitors

Khairurrijal1, F. A. Noor1, M. Abdullah1, Sukirno1, A. Ohta2, S. Miyazaki2 (1.Institut Teknologi Bandung(Indonesia), 2.Hiroshima Univ.(Japan))

https://doi.org/10.7567/SSDM.2009.P-1-11