Hole Tunnel Currents in TiN/HfSiO<sub>x</sub>N/SiO<sub>2</sub>/p-Si(100) MOS Capacitors

2009 International Conference on Solid State Devices and Materials

Oct 6, 2009 - Oct 9, 2009
Sendai Kokusai Hotel, Miyagi, Japan

Khairurrijal¹, F. A. Noor¹, M. Abdullah¹, Sukirno¹, A. Ohta², S. Miyazaki² (1.Institut Teknologi Bandung(Indonesia), 2.Hiroshima Univ.(Japan))