Highly Reliable Silicon Dioxide Formation Technique with Plasma and Thermal oxidation

Y. Kabe; J. Kitagawa; Y. Hirota; S. Sato; Z. Lu; M. Sometani; R. Hasunuma; K. Yamabe

doi:https://doi.org/10.7567/SSDM.2009.P-1-16

2009 International Conference on Solid State Devices and Materials

Oct 6, 2009 - Oct 9, 2009
Sendai Kokusai Hotel, Miyagi, Japan

[P-1-16] Highly Reliable Silicon Dioxide Formation Technique with Plasma and Thermal oxidation

Y. Kabe¹, J. Kitagawa¹, Y. Hirota¹, S. Sato², Z. Lu², M. Sometani², R. Hasunuma², K. Yamabe² (1.Tokyo Electron AT Ltd.(Japan), 2.Univ. of Tsukuba(Japan))

https://doi.org/10.7567/SSDM.2009.P-1-16

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