[P-1-16] Highly Reliable Silicon Dioxide Formation Technique with Plasma and Thermal oxidation

Y. Kabe¹、J. Kitagawa¹、Y. Hirota¹、S. Sato²、Z. Lu²、M. Sometani²、R. Hasunuma²、K. Yamabe² (1.Tokyo Electron AT Ltd.(Japan)、2.Univ. of Tsukuba(Japan))

https://doi.org/10.7567/SSDM.2009.P-1-16