Enhancement of Carbon Diffusion Caused by Thermal Oxidation on Si<sub>1-x</sub>C<sub>x</sub> Alloy Layer / Si(001) Surafces

H. Hozumi; S. Ogawa; A. Yoshigoe; S. Ishidzuka; J. Harries; Y. Teraoka; Y. Takakuwa

doi:https://doi.org/10.7567/SSDM.2009.P-1-17

[P-1-17] Enhancement of Carbon Diffusion Caused by Thermal Oxidation on Si_1-xC_x Alloy Layer / Si(001) Surafces

H. Hozumi¹、S. Ogawa¹、A. Yoshigoe²、S. Ishidzuka³、J. Harries²、Y. Teraoka²、Y. Takakuwa¹ (1.Tohoku Univ.(Japan)、2.Japan Atomic Energy Agency(Japan)、3.Akita National College of Tech.(Japan))

https://doi.org/10.7567/SSDM.2009.P-1-17

2009 International Conference on Solid State Devices and Materials

[P-1-17] Enhancement of Carbon Diffusion Caused by Thermal Oxidation on Si1-xCx Alloy Layer / Si(001) Surafces

[P-1-17] Enhancement of Carbon Diffusion Caused by Thermal Oxidation on Si_1-xC_x Alloy Layer / Si(001) Surafces