[P-1-20] Ion-Implanted Boron Activation in a Preamorphized Si Layer by Microwave Annealing

K. Hara¹, Y. Tanushi¹, S. Kuroki¹, K. Kotani¹, T. Ito¹ (1.Tohoku Univ.)

https://doi.org/10.7567/SSDM.2009.P-1-20