[P-1-20] Ion-Implanted Boron Activation in a Preamorphized Si Layer by Microwave Annealing

K. Hara¹、Y. Tanushi¹、S. Kuroki¹、K. Kotani¹、T. Ito¹ (1.Tohoku Univ.)

https://doi.org/10.7567/SSDM.2009.P-1-20