[P-1-21] Low Contact Resistance with Low Silicide/p⁺-Silicon Schottky Barrier for High Performance p-channel MOSFETs

H. Tanaka¹、T. Isogai¹、T. Goto¹、A. Teramoto¹、S. Sugawa¹、T. Ohmi¹ (1.Tohoku Univ.)

https://doi.org/10.7567/SSDM.2009.P-1-21