[P-1-22] Mobility Behavior in Ge_1-xSn_x Layers Grown on SOI Substrates

N. Tsutsui¹、Y. Shimura¹、O. Nakatsuka¹、A. Sakai²、S. Zaima¹ (1.Nagoya Univ.(Japan)、2.Osaka Univ.(Japan))

https://doi.org/10.7567/SSDM.2009.P-1-22