[P-1-25] Mechanism for Generation of Molecular-Level Line-Edge Roughness of ArF photoresist during Plasma Etching Processes

K. Koyama¹、B. Jinnai¹、S. Maeda²、K. Kato²、A. Yasuda²、H. Momose²、S. Samukawa¹ (1.Tohoku Univ.(Japan)、2.Mitsubishi Rayon Co., Ltd.(Japan))

https://doi.org/10.7567/SSDM.2009.P-1-25