[P-1-25] Mechanism for Generation of Molecular-Level Line-Edge Roughness of ArF photoresist during Plasma Etching Processes

K. Koyama¹, B. Jinnai¹, S. Maeda², K. Kato², A. Yasuda², H. Momose², S. Samukawa¹ (1.Tohoku Univ.(Japan), 2.Mitsubishi Rayon Co., Ltd.(Japan))

https://doi.org/10.7567/SSDM.2009.P-1-25