[P-1-28] Assessment of Ion-Bombardment Damage in Plasma-Exposed Si by Interface Layer Thickness and Charge-Trapping Defects

A. Matsuda¹、Y. Nakakubo¹、M. Kamei¹、Y. Takao¹、K. Eriguchi¹、K. Ono¹ (1.Kyoto Univ.)

https://doi.org/10.7567/SSDM.2009.P-1-28