Assessment of Ion-Bombardment Damage in Plasma-Exposed Si by Interface Layer Thickness and Charge-Trapping Defects

2009 International Conference on Solid State Devices and Materials

Oct 6, 2009 - Oct 9, 2009
Sendai Kokusai Hotel, Miyagi, Japan

A. Matsuda¹, Y. Nakakubo¹, M. Kamei¹, Y. Takao¹, K. Eriguchi¹, K. Ono¹ (1.Kyoto Univ.)