Dielectric Breakdown in MgO-barrier Magnetic Tunnel Junctions with a CoFeB based Synthetic Ferrimagnetic Recording Layer

M. Yamanouchi; Y. Mori; J. Hayakawa; H. Yamamoto; K. Miura; H. Hasegawa; K. Ito; K. Takeda; K. Meguro; H. Takahashi; H. Matsuoka; S. Ikeda; H. Ohno

doi:https://doi.org/10.7567/SSDM.2009.P-12-1

[P-12-1] Dielectric Breakdown in MgO-barrier Magnetic Tunnel Junctions with a CoFeB based Synthetic Ferrimagnetic Recording Layer

M. Yamanouchi¹, Y. Mori², J. Hayakawa¹, H. Yamamoto¹, K. Miura¹, H. Hasegawa¹, K. Ito¹, K. Takeda¹, K. Meguro¹, H. Takahashi¹, H. Matsuoka¹, S. Ikeda², H. Ohno² (1.Hitachi, Ltd.(Japan), 2.Tohoku Univ.(Japan))

https://doi.org/10.7567/SSDM.2009.P-12-1

2009 International Conference on Solid State Devices and Materials

[P-12-1] Dielectric Breakdown in MgO-barrier Magnetic Tunnel Junctions with a CoFeB based Synthetic Ferrimagnetic Recording Layer