Improvement of Opt-Electrical Properties in GaAsN by Controlling Step Density During Chemical Beam Epitaxy Growth

2009 International Conference on Solid State Devices and Materials

2009年10月6日〜 2009年10月9日
Sendai Kokusai Hotel, Miyagi, Japan

H. Suzuki¹、M. Inagaki¹、T. Honda¹、Y. Ohshita¹、N. Kojima¹、M. Yamaguchi¹ (1.Toyota Technological Inst.)