Improvement of Opt-Electrical Properties in GaAsN by Controlling Step Density During Chemical Beam Epitaxy Growth

2009 International Conference on Solid State Devices and Materials

Oct 6, 2009 - Oct 9, 2009
Sendai Kokusai Hotel, Miyagi, Japan

H. Suzuki¹, M. Inagaki¹, T. Honda¹, Y. Ohshita¹, N. Kojima¹, M. Yamaguchi¹ (1.Toyota Technological Inst.)