[P-3-20] Novel Dynamic Threshold Voltage Contact Etching Stop Layer (DT-CESL) Strained HfO₂ nMOSFET for Very Low Voltage Operation (0.7V)

W. C. Wu¹、T. S. Chao¹、K. T. Wang¹、S. C. Lee¹、T. H. Chiu¹、T. Y. Lu¹、C. S. Lai²、J. C. Wang²、M. W. Ma¹、K. H. Kao¹、W. C. Lo¹ (1.National Chiao Tung Univ.(Taiwan)、2.Chang Gung Univ.(Taiwan))

https://doi.org/10.7567/SSDM.2009.P-3-20