[P-3-20] Novel Dynamic Threshold Voltage Contact Etching Stop Layer (DT-CESL) Strained HfO₂ nMOSFET for Very Low Voltage Operation (0.7V)

W. C. Wu¹, T. S. Chao¹, K. T. Wang¹, S. C. Lee¹, T. H. Chiu¹, T. Y. Lu¹, C. S. Lai², J. C. Wang², M. W. Ma¹, K. H. Kao¹, W. C. Lo¹ (1.National Chiao Tung Univ.(Taiwan), 2.Chang Gung Univ.(Taiwan))

https://doi.org/10.7567/SSDM.2009.P-3-20