The Japan Society of Applied Physics

[P-3-20] Novel Dynamic Threshold Voltage Contact Etching Stop Layer (DT-CESL) Strained HfO2 nMOSFET for Very Low Voltage Operation (0.7V)

W. C. Wu1、T. S. Chao1、K. T. Wang1、S. C. Lee1、T. H. Chiu1、T. Y. Lu1、C. S. Lai2、J. C. Wang2、M. W. Ma1、K. H. Kao1、W. C. Lo1 (1.National Chiao Tung Univ.(Taiwan)、2.Chang Gung Univ.(Taiwan))

https://doi.org/10.7567/SSDM.2009.P-3-20