[P-3-5] Mecahnical stress evaluation of Si MOSFET structure using UV Raman spectroscopy measurements and calibrated TCAD simulation

A. Satoh¹, T. Tada², V. Poborchii², T. Kanayama², H. Arimoto¹ (1.Fujitsu Microelectronics Ltd.(Japan), 2.AIST(Japan))

https://doi.org/10.7567/SSDM.2009.P-3-5