[P-3-5] Mecahnical stress evaluation of Si MOSFET structure using UV Raman spectroscopy measurements and calibrated TCAD simulation

A. Satoh¹、T. Tada²、V. Poborchii²、T. Kanayama²、H. Arimoto¹ (1.Fujitsu Microelectronics Ltd.(Japan)、2.AIST(Japan))

https://doi.org/10.7567/SSDM.2009.P-3-5