The Japan Society of Applied Physics

[P-4-1] HAX-PES Study of SiN Film for Charge Storage Layer in High Performance SONOS Type Flash Memory Cell

D. Kosemura1,4, M. Takei1, K. Nagata1, H. Akamatsu1, M. Hattori1, D. Katayama1, T. Nishita2, T. Nakanishi2, Y. Hirota2, M. Machida3, J. Y. Son3, T. Koganezawa3, I. Hirosawa3, A. Ogura1 (1.Meiji Univ.(Japan), 2.Tokyo Electron Ltd.(Japan), 3.JASRI(Japan), 4.JSPS(Japan))

https://doi.org/10.7567/SSDM.2009.P-4-1