Formation free resistive switching memory device using Ge<sub>0.4</sub>Se<sub>0.6</sub> solid electrolyte

S. Z. Rahaman; S. Maikap; C. H. Lin; T. Y. Wu; Y. S. Chen; P. J. Tzeng; F. Chen; M. J. Kao; M. J. Tsai

doi:https://doi.org/10.7567/SSDM.2009.P-4-10

[P-4-10] Formation free resistive switching memory device using Ge_0.4Se_0.6 solid electrolyte

S. Z. Rahaman¹, S. Maikap¹, C. H. Lin², T. Y. Wu², Y. S. Chen², P. J. Tzeng², F. Chen², M. J. Kao², M. J. Tsai² (1.Chang Gung Univ.(Taiwan), 2.Industrial Tech. Res. Inst.(Taiwan))

https://doi.org/10.7567/SSDM.2009.P-4-10

2009 International Conference on Solid State Devices and Materials

[P-4-10] Formation free resistive switching memory device using Ge0.4Se0.6 solid electrolyte

[P-4-10] Formation free resistive switching memory device using Ge_0.4Se_0.6 solid electrolyte