[P-4-10] Formation free resistive switching memory device using Ge0.4Se0.6 solid electrolyte
S. Z. Rahaman1、S. Maikap1、C. H. Lin2、T. Y. Wu2、Y. S. Chen2、P. J. Tzeng2、F. Chen2、M. J. Kao2、M. J. Tsai2
(1.Chang Gung Univ.(Taiwan)、2.Industrial Tech. Res. Inst.(Taiwan))
https://doi.org/10.7567/SSDM.2009.P-4-10