Improved resistive switching of HfO<sub>X</sub>/TiN stack with a reactive metal layer and annealing

P. S. Chen; H. Y. Lee; Y. S. Chen; F. Chen; M. J. Tsai

doi:https://doi.org/10.7567/SSDM.2009.P-4-11

[P-4-11] Improved resistive switching of HfO_X/TiN stack with a reactive metal layer and annealing

P. S. Chen¹、H. Y. Lee^2,3、Y. S. Chen²、F. Chen²、M. J. Tsai² (1.Mingshin Univ. of Sci. and Tech.(Taiwan)、2.Industrial Tech. Res. Inst.(Taiwan)、3.National Tsing Hua Univ.(Taiwan))

https://doi.org/10.7567/SSDM.2009.P-4-11

2009 International Conference on Solid State Devices and Materials

[P-4-11] Improved resistive switching of HfOX/TiN stack with a reactive metal layer and annealing

[P-4-11] Improved resistive switching of HfO_X/TiN stack with a reactive metal layer and annealing