Improved resistive switching of HfO<sub>X</sub>/TiN stack with a reactive metal layer and annealing

P. S. Chen; H. Y. Lee; Y. S. Chen; F. Chen; M. J. Tsai

doi:https://doi.org/10.7567/SSDM.2009.P-4-11

[P-4-11] Improved resistive switching of HfO_X/TiN stack with a reactive metal layer and annealing

P. S. Chen¹, H. Y. Lee^2,3, Y. S. Chen², F. Chen², M. J. Tsai² (1.Mingshin Univ. of Sci. and Tech.(Taiwan), 2.Industrial Tech. Res. Inst.(Taiwan), 3.National Tsing Hua Univ.(Taiwan))

https://doi.org/10.7567/SSDM.2009.P-4-11

2009 International Conference on Solid State Devices and Materials

[P-4-11] Improved resistive switching of HfOX/TiN stack with a reactive metal layer and annealing

[P-4-11] Improved resistive switching of HfO_X/TiN stack with a reactive metal layer and annealing