[P-4-8] Programming Current Enhancement by Ge Incorporation into Tunnel Oxide Film

T. Ito¹, Y. Mitani¹, Y. Nakasaki¹, M. Koike¹, T. Konno¹, H. Matsuba¹, W. Kaneko¹, T. Kai¹, Y. Ozawa¹ (1.Toshiba Corp.)

https://doi.org/10.7567/SSDM.2009.P-4-8