[P-4-8] Programming Current Enhancement by Ge Incorporation into Tunnel Oxide Film

T. Ito¹、Y. Mitani¹、Y. Nakasaki¹、M. Koike¹、T. Konno¹、H. Matsuba¹、W. Kaneko¹、T. Kai¹、Y. Ozawa¹ (1.Toshiba Corp.)

https://doi.org/10.7567/SSDM.2009.P-4-8