Improved Switching Uniformity of a Carbon-based ReRAM device by Controlling Size of Conducting Filament

J. Park; H. Choi; M. Jo; J. Lee; T. W. Kim; J. Yoon; D. J. Seong; W. Lee; M. Chang; J. Shin; T. Lee; H. Hwang

doi:https://doi.org/10.7567/SSDM.2009.P-4-9

[P-4-9] Improved Switching Uniformity of a Carbon-based ReRAM device by Controlling Size of Conducting Filament

J. Park¹, H. Choi¹, M. Jo¹, J. Lee¹, T. W. Kim¹, J. Yoon¹, D. J. Seong¹, W. Lee¹, M. Chang¹, J. Shin¹, T. Lee¹, H. Hwang¹ (1.Gwangju Inst. Of Sci. and Tech.)

https://doi.org/10.7567/SSDM.2009.P-4-9

2009 International Conference on Solid State Devices and Materials

[P-4-9] Improved Switching Uniformity of a Carbon-based ReRAM device by Controlling Size of Conducting Filament