The Japan Society of Applied Physics

[P-6-17] GZO/GaN Schottky Barrier Ultraviolet Band-pass Photodetector with a Low-temperature-grown GaN Cap Layer

K. H. Chang1, J. K. Sheu1, M. L. Lee2, T. H. Hsueh1, C. C. Yang1, K. S. Kang1, J. F. Huang1, L. C. Peng1, W. C. Lai1 (1.National Cheng Kung Univ.(Taiwan), 2.Southern Taiwan Univ.(Taiwan))

https://doi.org/10.7567/SSDM.2009.P-6-17