The Japan Society of Applied Physics

[P-6-17] GZO/GaN Schottky Barrier Ultraviolet Band-pass Photodetector with a Low-temperature-grown GaN Cap Layer

K. H. Chang1、J. K. Sheu1、M. L. Lee2、T. H. Hsueh1、C. C. Yang1、K. S. Kang1、J. F. Huang1、L. C. Peng1、W. C. Lai1 (1.National Cheng Kung Univ.(Taiwan)、2.Southern Taiwan Univ.(Taiwan))

https://doi.org/10.7567/SSDM.2009.P-6-17