Effects of Pre-treatment on Passivation of AlGaN/GaN on Silicon HEMTs

J. H. Kim; H. G. Choi; H. J. Song; C. H. Roh; J. H. Lee; J. H. Park; C. K. Hahn

doi:https://doi.org/10.7567/SSDM.2009.P-6-18

2009 International Conference on Solid State Devices and Materials

Oct 6, 2009 - Oct 9, 2009
Sendai Kokusai Hotel, Miyagi, Japan

[P-6-18] Effects of Pre-treatment on Passivation of AlGaN/GaN on Silicon HEMTs

J. H. Kim^1,2, H. G. Choi¹, H. J. Song¹, C. H. Roh¹, J. H. Lee¹, J. H. Park², C. K. Hahn¹ (1.Korea Electronics Tech. Inst.(Korea), 2.Korea Univ.(Korea))

https://doi.org/10.7567/SSDM.2009.P-6-18

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